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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleTSM900N10CP ROG
TSM900N10CP ROG Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

TSM900N10CP ROG - Taiwan Semiconductor Corporation

Manifakti Nimewo Pati
TSM900N10CP ROG
Manifakti
Taiwan Semiconductor
Allelco Nimewo Pati
32D-TSM900N10CP ROG
ECAD modèl
Pati Deskripsyon
MOSFET N-CHANNEL 100V 15A TO252
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
TSM900N10.pdf
RoHs Status
Nan stok: 52530

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon TSM900N10CP ROG Tech
Taiwan Semiconductor Corporation - TSM900N10CP ROG espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Taiwan Semiconductor Corporation - TSM900N10CP ROG

Pwodwi atribi Valè atribi  
Manifakti Taiwan Semiconductor  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-252, (D-Pak)  
Seri -  
Rds Sou (Max) @ Id, Vgs 90mOhm @ 5A, 10V  
Dissipasyon pouvwa (Max) 50W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1480 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 15A (Tc)  
Nimewo pwodwi baz TSM900  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Taiwan Semiconductor Corporation TSM900N10CP ROG.

Pwodwi atribi TSM900N10CP ROG TSM900N06CP ROG TSM850N06CX TSM850N06CX RFG
Nimewo Pati TSM900N10CP ROG TSM900N06CP ROG TSM850N06CX TSM850N06CX RFG
Manifakti Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Founisè Aparèy pake TO-252, (D-Pak) TO-252, (D-Pak) SOT-23 SOT-23
Nimewo pwodwi baz TSM900 TSM900 TSM850 TSM850
Pòtay Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V 9.3 nC @ 10 V 9.5 nC @ 10 V 9.5 nC @ 10 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Drenaj Sous Voltage (Vdss) 100 V 60 V 60 V 60 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Rds Sou (Max) @ Id, Vgs 90mOhm @ 5A, 10V 90mOhm @ 6A, 10V 85mOhm @ 2.3A, 10V 85mOhm @ 2.3A, 10V
Kapasite Antre (Ciss) (Max) @ Vds 1480 pF @ 50 V 500 pF @ 15 V 529 pF @ 30 V 529 pF @ 30 V
Seri - - - -
Dissipasyon pouvwa (Max) 50W (Tc) 25W (Tc) 1W (Ta), 1.7W (Tc) 1.7W (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
FET Feature - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 15A (Tc) 11A (Tc) 2.3A (Ta), 3A (Tc) 3A (Tc)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vgs (Max) ±20V ±20V ±20V ±20V

TSM900N10CP ROG fich PDF

Download TSM900N10CP ROG PDF fich ak dokiman Taiwan Semiconductor Corporation pou TSM900N10CP ROG - Taiwan Semiconductor Corporation.

Fich
TSM900N10.pdf

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Sètifikasyon & Manm

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TSM900N10CP ROG Image

TSM900N10CP ROG

Taiwan Semiconductor Corporation
32D-TSM900N10CP ROG

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